| PART |
Description |
Maker |
| APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| HGTG30N120CN HGTG30N120D2 |
30A/ 1200V N-Channel IGBT
30A, 1200V N-Channel IGBT
75A 1200V NPT Series N-Channel IGBT
|
INTERSIL[Intersil Corporation]
http://
|
| FGA30N120FTD FGA30N120FTDTU |
1200V, 30A Trench IGBT
|
Fairchild Semiconductor
|
| RJH1CV6DPQ-E0 |
1200V - 30A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJK03M5DPA-00-J5A |
30V, 30A, 6.5mmax.N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RHRG30120 FN3410 |
From old datasheet system
30A, 1200V Hyperfast Diode
|
INTERSIL[Intersil Corporation]
|
| RHRP30120 FN3409 |
From old datasheet system
30A, 1200V Hyperfast Diode
|
INTERSIL[Intersil Corporation]
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FGW30N120H |
Discrete IGBT (High-Speed V series) 1200V / 30A
|
Fuji Electric
|
